Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front the film thickness profile is interest, since it related to kinetics and provides information for ALD process development. A deposited was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) results analyzed Monte Carlo simulation. new procedure obtaining relative from data described. From obtained profile, penetration depth at 50% initial corresponding slope determined saturation front. Comparison developed performed against independent measurements optical reflectometry. ED-EPMA characterization profiles structures, supported by simulation, expected prove useful tool